Product Code: SIL6464.0
CAS No: 35788-99-9
SDS Sheets: EU | US
Pack Size
5 g

Product data and descriptions listed are typical values, not intended to be used as specification.

  • Molecular Formula

  • Molecular Weight (g/mol)

  • TSCA

  • Melting Point (˚C)


Additional Properties

  • Hydrolytic Sensitivity

    8: reacts rapidly with moisture, water, protic solvents
  • Application

    Catalyst for Tischenko reaction.1
    Employed in CVD of lanthanum silicate.2
    Catalyst for "click" acetylene-azide reactions.3


    1. Bebenbach, H. et al. Angew. Chem., Int. Ed. Engl. 1998, 37, 1569.
    2. Aspinal, H. C. et al. Chem. Vap. Deposition 2003, 9, 7.
    3. Hong, L. et al. Chem. Commun. 2013, 49, 5589.


  • Packaging Under

  • ALD Material

    Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.

    Lanthanum tris(hexamethyldisilazide); Lanthanum hexamethyldisilazide; Tris[bis(trimethylsilyl)amido]lanthanum; Lanthanum tris[bis(trimethylsilyl)amide]

  • Catalyst for Tischenko reaction
  • Employed in CVD of lanthanum silicate
  • Catalyst for “click” acetylene-azide reactions