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EINECS Number: 236-704-1
Alternative Name: HCDS
Specific Gravity: 1.562
Flashpoint: 78°C (172°F)
HMIS Key: 3-3-2-X
Hydrolytic Sensitivity: 8: reacts rapidly with moisture, water, protic solvents
Refractive Index: 1.4750
Application: In combination with NH3 generates SiN films.1
Reference: 1. Tanaka, M. et al. J. Electrochem. Soc. 2000, 147, 2284.
Additional Properties: Precursor for CVD of SiN filmsVapor pressure, 85°: 110 mm