Pack Size
Quantity
Price
 
25 g
$523.00
3 kg
Contact Us For Pricing

Product data and descriptions listed are typical values, not intended to be used as specification.

  • Einecs Number

    236-704-1
  • Synonyms

    HCDS
  • HMIS

    3-3-2-X
  • Molecular Formula

    Cl6Si2
  • Molecular Weight (g/mol)

    268.89
  • Purity (%)

    100%
  • TSCA

    Yes
  • Boiling Point (˚C/mmHg)

    144-6°
  • Density (g/mL)

    1.562
  • Flash Point (˚C)

    78°C (172°F)
  • Melting Point (˚C)

    -1°
  • Refractive Index @ 20˚C

    1.4750

Additional Properties

  • Hydrolytic Sensitivity

    8: reacts rapidly with moisture, water, protic solvents
  • Application

    In combination with NH3 generates SiN films.1

    Reference

    1. Tanaka, M. et al. J. Electrochem. Soc. 2000, 147, 2284.

    Safety

  • Packaging Under

    Nitrogen
  • Silicon Chemistry, Applied Technology

    Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications – Kaloyeros, Jove, Goff, & Arkles

    This article provides an overview of the state-of-the-art chemistry and processing technologies for silicon nitride and silicon nitride- rich films, i.e., silicon nitride with C inclusion, both in hydrogenated (SiNx:H and SiNx:H(C)) and non-hydrogenated (SiNx and SiNx(C)) forms. The emphasis is on emerging trends and innovations in these SiNx material system technologies, with focus on Si and N source chemistries and thin film growth processes, including their primary effects on resulting film properties. It also illustrates that SiNx and its SiNx(C) derivative are the focus of an ever-growing research and manufacturing interest and that their potential usages are expanding into new technological areas.