- Einecs Number 236-704-1
- Synonyms HCDS
- HMIS 3-3-2-X
- Molecular Formula Cl6Si2
- Molecular Weight (g/mol) 268.89
- TSCA Yes
- Delta H Vaporization (kJ/mol) 11.1 kcal/mole
- Autoignition Temp (˚C) 320
- Boiling Point (˚C/mmHg) 144-146
- Density (g/mL) 1.562
- Flash Point (˚C) 78 °C
- Melting Point (˚C) -1°
- Refractive Index @ 20˚C 1.4750
Review of synthetic utility.1
Converts phosphine oxides to phosphines with inversion of configuration.2
Catalyst for cyclotrimerization of acetylenes.3
F&F: Vol. 3, p 148.
1. Handbook of Reagents for Organic Synthesis, Reagents for Silicon-Mediated Organic Synthesis, Fuchs, P. L. Ed., John Wiley and Sons, Ltd., 2011, p. 309-310.
2. Mislow, K. et al. J. Am. Chem. Soc. 1969, 91, 2788, 7012, 7023.
3. Young, J. et al. J. Am. Chem. Soc. 1998, 120, 6834.
4. Homaidan, F. R.; Issidorides, C. H. Heterocycles, 1981, 16, 411.
Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Hexachlorodisilane; HCDS; Disilane hexachloride
CAUTION: HYDROLYSIS POLYMERS MAY IGNITE SPONTANEOUSLY, EVEN IN ABSENCE OF OXYGEN