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Product Code: SIH5905.0

Cas No: 13465-77-5

25 g
5 g
3 kg
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Product data and descriptions listed are typical values, not intended to be used as specification.

ALD Material

Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.

Hexachlorodisilane; HCDS; Disilane hexachloride

  • ΔHcomb: -733 kJ/mol
  • ΔHform: -239 kJ/mol
  • ΔHvap: 46.5 kJ/mol
  • Vapor pressure, 40 °C: 12 mm
  • CVD precursor for SiN
  • Converts phosphine oxides to phosphines with inversion of configuration
  • Catalyst for cyclotrimerization of acetylenes
  • Deoxygenates amineoxides
  • EINECS Number: 236-704-1

    Alternative Name: HCDS

    Specific Gravity: 1.562

    Flashpoint: 78°C (172°F)

    HMIS Key: 3-3-2-X

    Hydrolytic Sensitivity: 8: reacts rapidly with moisture, water, protic solvents

    Formula: Cl6Si2


    Refractive Index: 1.4750

    Application: Review of synthetic utility.1
    Converts phosphine oxides to phosphines with inversion of configuration.2
    Catalyst for cyclotrimerization of acetylenes.3
    Deoxygenates amineoxides.4

    Reference: 1. Handbook of Reagents for Organic Synthesis, Reagents for Silicon-Mediated Organic Synthesis, Fuchs, P. L. Ed., John Wiley and Sons, Ltd., 2011, p. 309-310.
    2. Mislow, K. et al. J. Am. Chem. Soc. 1969, 91, 2788, 7012, 7023.
    3. Young, J. et al. J. Am. Chem. Soc. 1998, 120, 6834.
    4. Homaidan, F. R.; Issidorides, C. H. Heterocycles, 1981, 16, 411.

    Fieser: F&F: Vol. 3, p 148.

    Additional Properties: 320
    ?Hcomb: -175 kcal/mole
    ?Hform: -57 kcal/mole
    ?Hvap: 11.1 kcal/mole
    CVD precursor for SiN
    Vapor pressure, 85°: 110 mm