HEXACHLORODISILANE

Product Code: SIH5905.0
CAS No: 13465-77-5
SDS Sheets: EU | US
Navigate this page...
13465-77-5
Save for Later
Pack Size
Quantity
Price
 
5 g
$66.00
25 g
$264.00
3 kg
Contact Us For Pricing

Prices listed are EXW price (Morrisville, PA US) in USD. Prices vary depending on currency and Incoterms.

Product data and descriptions listed are typical values, not intended to be used as specification.

  • Einecs Number

    236-704-1
  • Synonyms

    HCDS
  • HMIS

    3-3-2-X
  • Molecular Formula

    Cl6Si2
  • Molecular Weight (g/mol)

    268.89
  • TSCA

    Yes
  • Delta H Vaporization (kJ/mol)

    11.1 kcal/mole
  • Autoignition Temp (˚C)

    320
  • Boiling Point (˚C/mmHg)

    144-6°
  • Density (g/mL)

    1.562
  • Flash Point (˚C)

    78 °C
  • Melting Point (˚C)

    -1°
  • Refractive Index @ 20˚C

    1.4750

Additional Properties

  • Hydrolytic Sensitivity

    8: reacts rapidly with moisture, water, protic solvents

    • Application

    Review of synthetic utility.1
    Converts phosphine oxides to phosphines with inversion of configuration.2
    Catalyst for cyclotrimerization of acetylenes.3
    Deoxygenates amineoxides.4

    Fieser

    F&F: Vol. 3, p 148.

    Reference

    1. Handbook of Reagents for Organic Synthesis, Reagents for Silicon-Mediated Organic Synthesis, Fuchs, P. L. Ed., John Wiley and Sons, Ltd., 2011, p. 309-310.
    2. Mislow, K. et al. J. Am. Chem. Soc. 1969, 91, 2788, 7012, 7023.
    3. Young, J. et al. J. Am. Chem. Soc. 1998, 120, 6834.
    4. Homaidan, F. R.; Issidorides, C. H. Heterocycles, 1981, 16, 411.

    Safety

  • Packaging Under

    Nitrogen

    • ALD Material

    Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.

    Hexachlorodisilane; HCDS; Disilane hexachloride

  • CAUTION: HYDROLYSIS POLYMERS MAY IGNITE SPONTANEOUSLY, EVEN IN ABSENCE OF OXYGEN

  • ΔHcomb: -733 kJ/mol
  • ΔHform: -239 kJ/mol
  • ΔHvap: 46.5 kJ/mol
  • Vapor pressure, 40 °C: 12 mm
  • CVD precursor for SiN
  • Converts phosphine oxides to phosphines with inversion of configuration
  • Catalyst for cyclotrimerization of acetylenes
  • Deoxygenates amineoxides