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- HMIS 2-1-1-X
- Molecular Formula C18H54ErN3Si6
- Molecular Weight (g/mol) 648.43
- Purity (%) 97%
- TSCA No
- Boiling Point (˚C/mmHg) 165° / 0.04 sub
- Melting Point (˚C) 173-9°
Additional Properties
Application
Dopant for semiconductors for optoelectonic applications.1
Reference
1. Just, O. et al. Mat. Res. Soc. Symp. Proc. 1996, 415, 111.r
Safety
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