To search by structure, left click in the box below to display the chemdraw toolbar. Then, draw the chemical structure of interest in the box using the toolbar. When your structure is complete, click “Search by Name” or “Search by SMILES” to generate the product name or SMILES respectively. This feature will search within the Gelest product database for matching chemical names or SMILES. Note: In cases where Gelest uses alternate chemical names, it may be necessary to search for the product of interest by its CAS#.
- Einecs Number 216-466-5
- HMIS 4-4-2-X
- Molecular Formula H6Si2
- Molecular Weight (g/mol) 62.22
- Purity (%) 100%
- TSCA Yes
- Boiling Point (˚C/mmHg) -14.5°
- Density (g/mL) 0.686
- Density Temperature (˚C) -25
- Melting Point (˚C) -132°
Additional Properties
Application
Employed in epitaxial deposition of silicon for solar and photoelectric devices.1
Reference
1. Lin, H. et al. Solid State Electron. 1996, 39, 1731.
Safety
Silicon Chemistry, Applied Technology
Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications – Kaloyeros, Jove, Goff, & Arkles
This article provides an overview of the state-of-the-art chemistry and processing technologies for silicon nitride and silicon nitride- rich films, i.e., silicon nitride with C inclusion, both in hydrogenated (SiNx:H and SiNx:H(C)) and non-hydrogenated (SiNx and SiNx(C)) forms. The emphasis is on emerging trends and innovations in these SiNx material system technologies, with focus on Si and N source chemistries and thin film growth processes, including their primary effects on resulting film properties. It also illustrates that SiNx and its SiNx(C) derivative are the focus of an ever-growing research and manufacturing interest and that their potential usages are expanding into new technological areas.
Related Products
Silanes
Gases