Pack Size
Quantity
Price
 
25 g
$1,024.00

Product data and descriptions listed are typical values, not intended to be used as specification.

  • Einecs Number

    216-466-5
  • HMIS

    4-4-2-X
  • Molecular Formula

    H6Si2
  • Molecular Weight (g/mol)

    62.22
  • Purity (%)

    100%
  • TSCA

    Yes
  • Boiling Point (˚C/mmHg)

    -14.5
  • Density (g/mL)

    0.686
  • Density Temperature (˚C)

    -25
  • Melting Point (˚C)

    -132°

Additional Properties

  • Hydrolytic Sensitivity

    10: reacts extremely rapidly with moisture and oxygen - may be pyrophoric - sealed system required
  • Application

    Employed in epitaxial deposition of silicon for solar and photoelectric devices.1

    Reference

    1. Lin, H. et al. Solid State Electron. 1996, 39, 1731.

    Safety

  • Packaging Under

    Nitrogen
  • Silicon Chemistry, Applied Technology

    Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications – Kaloyeros, Jove, Goff, & Arkles

    This article provides an overview of the state-of-the-art chemistry and processing technologies for silicon nitride and silicon nitride- rich films, i.e., silicon nitride with C inclusion, both in hydrogenated (SiNx:H and SiNx:H(C)) and non-hydrogenated (SiNx and SiNx(C)) forms. The emphasis is on emerging trends and innovations in these SiNx material system technologies, with focus on Si and N source chemistries and thin film growth processes, including their primary effects on resulting film properties. It also illustrates that SiNx and its SiNx(C) derivative are the focus of an ever-growing research and manufacturing interest and that their potential usages are expanding into new technological areas.