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DISILANE, 99.9+%
EINECS Number: 216-466-5
Specific Gravity: 0.686
HMIS Key: 4-4-2-X
Hydrolytic Sensitivity: 10: reacts extremely rapidly with moisture and oxygen - may be pyrophoric - sealed system required
Formula: H6Si2
Purity: 100%
Application: Employed in epitaxial deposition of silicon for solar and photoelectric devices.1
Reference: 1. Lin, H. et al. Solid State Electron. 1996, 39, 1731.
Additional Properties: 158.85°C?Hform: 80 kJ/mole50.63 atm
Gases
Silanes
Silicon Nitride Precursors
Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications – Kaloyeros, Jove, Goff, & Arkles