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- HMIS 3-3-1-X
- Molecular Formula C9H27ClSi4
- Molecular Weight (g/mol) 283.11
- Purity (%) 95%
- TSCA Yes
- Boiling Point (˚C/mmHg) 95-6° / 2
- Melting Point (˚C) 47-9°
Employed as a silylation reagent for photolithography substrates.1
1. Wilharm, P. et al. US Patent 5,162,559, 1992.