ZIRCONIUM TETRAKIS(DIMETHYLAMIDE)

Product Code: OMZR080
CAS No: 19756-04-8
SDS Sheets: EU | US
Pack Size
Quantity
Price
 
5 g
$203.00
25 g
$806.00

Product data and descriptions listed are typical values, not intended to be used as specification.

  • Synonyms

    TDMAZ
  • HMIS

    3-2-1-X
  • Molecular Formula

    C8H24N4Zr
  • Molecular Weight (g/mol)

    267.53
  • TSCA

    No
  • Boiling Point (˚C/mmHg)

    80/0.1
  • Melting Point (˚C)

    64°

Additional Properties

  • Hydrolytic Sensitivity

    8: reacts rapidly with moisture, water, protic solvents
  • Safety

  • Packaging Under

    Nitrogen
  • ALD Material

    Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.

    Zirconium tetrakis(dimethylamide); TDMAZ; Tetrakis(dimethylamido)zirconium

  • CVD precursor for Dynamic random-access memory (DRAM) capacitors