All structures are computer generated. Please rely on the product data below for placing your order. If you see any errors in structures, please email customer service so that they can be addressed.


Product Code: OMTI083

Cas No: 308103-54-0

25 g
5 g
ALD Material

Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.

Titanium tetrakis(ethylmethylamide); Tetrakis(ethylmethylamido)titanium
  • Precursor to TiN by CVD
  • Specific Gravity: 0.923

    HMIS Key: 3-3-1-X

    Hydrolytic Sensitivity: 8: reacts rapidly with moisture, water, protic solvents

    Formula: C12H32N4Ti

    Purity: 99%

    Application: Precursor to TiN by CVD.1

    Reference: 1. Shin, H. et al. Chem. Mater. 1997, 9, 76.