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Product Code: OMTI075

Cas No: 4419-47-0

25 g
5 g
2 kg
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Product data and descriptions listed are typical values, not intended to be used as specification.

ALD Material

Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.

Titanium tetrakis(diethylamide); Tetrakis(diethylamido)titanium; TDEAT
  • Vapor pressure, 40 °C: 0.035 mm
  • In combination with ammonia produces TiN by CVD
  • Alternative Name: TDEAT

    Specific Gravity: 0.938

    Flashpoint: 37°C (98°F)

    HMIS Key: 3-3-1-X

    Hydrolytic Sensitivity: 8: reacts rapidly with moisture, water, protic solvents

    Formula: C16H40N4Ti

    Purity: 99%


    Refractive Index: 1.5360

    Application: In combination with ammonia produces TiN by CVD.1

    Reference: 1. Yun, J. et al. Thin Solid Films 1998, 312, 14.