4731-53-7

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TRIOCTYLPHOSPHINE, 95%            

Product Code: OMPH080

Cas No: 4731-53-7

R&D quantities:

25 g
$50.00
ALD Material

Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.

Trioctylphosphine; TOP; Trioctyltri-n-octylphosphine
  • Reagent for SILAR deposition of CdSe-ZnSe core-shell quantum dots
  • Boiling Point: 175° / 0.3

    EINECS Number: 225-234-2

    Molecular Weight: 370.60

    Specific Gravity: 0.831

    Flashpoint: 147°C (297°F)

    HMIS Key: 3-2-1-X

    Hydrolytic Sensitivity: 8: reacts rapidly with moisture, water, protic solvents

    Formula: C24H51P

    Refractive Index: 1.468

    Application: Reagent for SILAR deposition of CdSe-ZnSe core-shell quantum dots.1

    Reference: 1. Hao, J. et al. J. Chem. Soc., Chem. Commun., 2013, 49, 6346.

    Additional Properties: 168