HAFNIUM TETRAKIS(ETHYLMETHYLAMIDE), 99+%

Product Code: OMHF083.1
CAS No: 352535-01-4
SDS Sheets: EU | US
Pack Size
Quantity
Price
 
25 g
$1,197.00

Product data and descriptions listed are typical values, not intended to be used as specification.

  • Einecs Number

    482-470-0
  • HMIS

    3-2-1-X
  • Molecular Formula

    C12H32HfN4
  • Molecular Weight (g/mol)

    410.9
  • Boiling Point (˚C/mmHg)

    78° / 0.01
  • Melting Point (˚C)

    > 300

Additional Properties

  • Hydrolytic Sensitivity

    9: reacts extremely rapidly with atmospheric moisture - may be pyrophoric - glove box or sealed system required
  • Safety

  • Packaging Under

    Nitrogen
  • ALD Material

    Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.

    Hafnium tetrakis(ethylmethylamide); Tetrakis(ethylmethylamido)hafnium

  • ALD process window: 150-225 °C
  • Standard grade available, OMHF083