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TITANIUM TETRAIODIDE (99.99% on metals basis)
Boiling Point: 377°
EINECS Number: 231-754-0
Melting Point: 150-1°
Molecular Weight: 555.52
Specific Gravity: 4.3
HMIS Key: 3-2-1-X
Hydrolytic Sensitivity: 8: reacts rapidly with moisture, water, protic solvents
Application: Employed in CVD of Ti and TiN films for microelectronics.1,2
In combination with SiI4 forms Ti-Si-N diffusion barriers.3
Reference: 1. Faltermeier, C. et al. J. Electrochem. Soc. 1997, 144, 1002.
2. Kaloyeros, A. et al. U.S. Patent 6,090,709, 2000.
3. Eisenbraun, E. et al. J. Vac. Sci. Technol., B 2000, 18(4), 2011.
Additional Properties: ?Hform: -89.8 kcal/mole?Hsub: 23.4 kcal/moleUndergoes thermal transition at 126-9°Contains ~ 3% free IodineCocatalyst with Al(iBu)3 for high cis-butadiene polymersVapor pressure, 275°: 100 mm