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- Einecs Number 231-754-0
- HMIS 3-2-1-X
- Molecular Formula I4Ti
- Molecular Weight (g/mol) 555.52
- TSCA Yes
- Boiling Point (˚C/mmHg) 377
- Density (g/mL) 4.3
- Melting Point (˚C) 150-1°
Additional Properties
Application
Employed in CVD of Ti and TiN films for microelectronics.1,2
In combination with SiI4 forms Ti-Si-N diffusion barriers.3
Reference
1. Faltermeier, C. et al. J. Electrochem. Soc. 1997, 144, 1002.
2. Kaloyeros, A. et al. U.S. Patent 6,090,709, 2000.
3. Eisenbraun, E. et al. J. Vac. Sci. Technol., B 2000, 18(4), 2011.
Safety
Metal-Organic Chemistry, Applied Chemistry & Physics
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