Pack Size
Quantity
Price
 
25 g
$417.00

Product data and descriptions listed are typical values, not intended to be used as specification.

  • HMIS

    3-0-1-X
  • Molecular Formula

    F5Ta
  • Molecular Weight (g/mol)

    275.94
  • TSCA

    Yes
  • Delta H Vaporization (kJ/mol)

    11.0 kcal/mole
  • Boiling Point (˚C/mmHg)

    229-230°
  • Density (g/mL)

    4.74
  • Melting Point (˚C)

    96-7°

Additional Properties

  • Hydrolytic Sensitivity

    7: reacts slowly with moisture/water
  • Application

    Employed in CVD of TaN for diffusion barriers in microelectronics.1

    Reference

    1. Kaloyeros, A. et al. U.S. Patent 6,139,922, 2000.

    Safety

  • Packaging Under

    Nitrogen
  • ALD Material

    Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.

    Tantalum pentafluoride; Pentafluorotantalum; Tantalum V fluoride

  • Soluble: hot CCl4
  • ΔHvap: 11.0 kcal/mol
  • Employed in CVD of TaN for diffusion barriers in microelectronics