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Boiling Point: 348-9°
EINECS Number: 236-618-4
Melting Point: 265°
Molecular Weight: 580.49
Specific Gravity: 4.67
HMIS Key: 3-0-1-X
Hydrolytic Sensitivity: 7: reacts slowly with moisture/water
Application: Precursor for Ta and TaN by CVD.1,2
Reference: 1. Chen, X. et al. J. Vac. Sci. Technol., B 1998, 16, 2887.
2. Arkles, B. et al. U.S. Patent 5,919,531, 1999.
Additional Properties: ?Hsub: 25.8 kcal/mole?Hvap: 14.9 kcal/moleTriple point: 267°Vapor pressure, 290°: 215 mmVapor pressure, 215°: 10 mm