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- Einecs Number 236-612-1
- HMIS 3-0-1-X
- Molecular Formula Br4Ge
- Molecular Weight (g/mol) 392.23
- Purity (%) 97%
- TSCA Yes
- Delta H Vaporization (kJ/mol) 21.8 cal/mole
- Boiling Point (˚C/mmHg) 186.5°
- Density (g/mL) 3.132
- Density Temperature (˚C) 25
- Melting Point (˚C) 26.1°
- Refractive Index @ 20˚C 1.6269
Doping source in vapor phase epitaxy of III-V semiconductors.1
1. Hitachi Chem. Abstr. 77, P119870p; Brit. Patent 1,285,686, 1972.