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EINECS Number: 236-612-1
Specific Gravity: 3.132
HMIS Key: 3-0-1-X
Hydrolytic Sensitivity: TSCA
Refractive Index: 1.6269
Application: Doping source in vapor phase epitaxy of III-V semiconductors.1
Reference: 1. Hitachi Chem. Abstr. 77, P119870p; Brit. Patent 1,285,686, 1972.
Additional Properties: Soluble: ethanol, toluene, etherSurface tension, 30°: 35.5 dynes/cm?Hform: -78.5 kcal/mole?Hvap: 21.8 cal/moleEthanol, Toluene, Ether