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- HMIS 2-1-0-X
- Molecular Formula C4H6MNO4·4H2O
- Molecular Weight (g/mol) 173.02/245.08
- TSCA Yes
- Boiling Point (˚C/mmHg) NA
- Density (g/mL) 1.589
With Y(OAc)3 forms non-volatile ferroelectric memory devices by sol-gel method.1
1. Tadanaga, K. et al. J. Sol-Gel Sci. Technol. 1998, 13, 903.