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Product Code: AKM546

Cas No: 14324-99-3

5 g
ALD Material

Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.

Manganese(III) 2,2,6,6-tetramethyl-3,5-heptanedionate; Manganese DPPD; Tris(dipivaloylmethanato)manganese
  • Color: black
  • Soluble: THF
  • Employed in CVD of MnO2 at 360-450 ° C
  • Employed in ALD of YMnO3 films

    HMIS Key: 2-1-0-X

    Hydrolytic Sensitivity: 4: no reaction with water under neutral conditions

    Formula: C33H57MnO6

    TSCA: No

    Application: Employed in ALD of YMnO3 films.1

    Reference: 1. Uusi-Esko, K. et al. Chem. Mater. 2009, 21, 5691.

    Additional Properties: Black
    >125° / 1 mm sub
    Employed in CVD of MnO2 at 360-450°C