MANGANESE(III) 2,2,6,6-TETRAMETHYL-3,5-HEPTANEDIONATE

Product Code: AKM546
CAS No: 14324-99-3
SDS Sheets: EU | US
Pack Size
Quantity
Price
 
5 g
$297.00

Product data and descriptions listed are typical values, not intended to be used as specification.

  • Synonyms

    TRIS(DIPIVALOYLMETHANATO)MANGANESE
  • HMIS

    2-1-0-X
  • Molecular Formula

    C33H57MnO6
  • Molecular Weight (g/mol)

    604.74
  • TSCA

    No
  • Boiling Point (˚C/mmHg)

    >250° dec
  • Melting Point (˚C)

    164-5°

Additional Properties

  • Hydrolytic Sensitivity

    4: no reaction with water under neutral conditions
  • Application

    Employed in ALD of YMnO3 films.1

    Reference

    1. Uusi-Esko, K. et al. Chem. Mater. 2009, 21, 5691.

    Safety

  • Packaging Under

    Nitrogen
  • ALD Material

    Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.

    Manganese(III) 2,2,6,6-tetramethyl-3,5-heptanedionate; Manganese DPPD; Tris(dipivaloylmethanato)manganese

  • Color: black
  • Soluble: THF
  • Employed in CVD of MnO2 at 360-450 ° C
  • Employed in ALD of YMnO3 films