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Product Code: AKL454

Cas No: 1907-33-1

100 g
25 g
ALD Material

Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.

Lithium t-butoxide; tert-Butoxylithium; Lithium tert-butylate; Lithium 2-methylpropan-2-olate; 2-Methyl-2-propanol, lithium salt
  • Solubility, tbutanol: 12 g/L
  • Solubility, heptane: 80 g/L
  • Solubility, THF: 196 g/L
  • Sublimes as hexamer, hexamer in benzene
  • EINECS Number: 217-611-5

    Specific Gravity: 0.89

    HMIS Key: 3-4-2-X

    Hydrolytic Sensitivity: 7: reacts slowly with moisture/water

    Formula: C4H9LiO


    Application: Sublimes as hexamer, hexamer in benzene.1

    Reference: 1. Bain, M. Can. J. Chem. 1964, 42, 945.

    Additional Properties: Solubility, heptane: 80 g/l
    Solubility, THF: 196 g/l
    t-butanol 12 g/l