Product Code: AKL435
CAS No: 14319-13-2
SDS Sheets: EU | US
Pack Size
5 g
500 g
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Product data and descriptions listed are typical values, not intended to be used as specification.

  • HMIS

  • Molecular Formula

  • Molecular Weight (g/mol)

  • TSCA

  • Boiling Point (˚C/mmHg)

  • Melting Point (˚C)

    230-4° dec

Additional Properties

  • Hydrolytic Sensitivity

    4: no reaction with water under neutral conditions
  • Safety

  • Packaging Under

  • ALD Material

    Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.

    Lanthanum 2,2,6,6-tetramethyl-3,5-heptanedionate; Lanthanum TMHD

  • ΔHsub: 34.3 kcal/mol
  • Solubility, chloroform: 45 g/L
  • Solubility, dioxane: 30 g/L
  • Intermediate for lanthanum aluminate substrates for superconductors