To search by structure, left click in the box below to display the chemdraw toolbar. Then, draw the chemical structure of interest in the box using the toolbar. When your structure is complete, click “Search by Name” or “Search by SMILES” to generate the product name or SMILES respectively. This feature will search within the Gelest product database for matching chemical names or SMILES. Note: In cases where Gelest uses alternate chemical names, it may be necessary to search for the product of interest by its CAS#.
All structures are computer generated. Please rely on the product data below for placing your order. If you see any errors in structures, please email customer service so that they can be addressed.
The growth of thin films via chemical vapor deposition (CVD) is an industrially significant process with a wide array of applications, notably in microelectronic device fabrication. A volatilized precursor (such as a silane, organometallic or metal coordination complex) is passed over a heated substrate. Thermal decomposition of the precursor produces a thin-film deposit, and ideally, the ligands associated with the precursor are cleanly lost to the gas phase as reaction products. Compared to other thin-film production techniques, CVD offers several significant advantages, most notably the potential for effecting selective deposition and lower processing temperatures. Many metal CVD depositions are autocatalytic. Growth of such thin films is characterized by an induction period, which is a consequence of the higher barriers that relate to the activation of the precursor on a non-native substrate. CVD is the preferred deposition method for fabricating optical storage, as it is a well-established method with good scalability, reproducibility, and uniformity. It is also capable of high rates and good composition control.
Hafnium 2-methoxymethyl-2-propoxide; Hafnium methoxy-t-butoxide, Hafnium MMP
Alternative Name: HAFNIUM MMP (MMP = METHOXY-t-BUTOXIDE)
Specific Gravity: 1.303
Flashpoint: 67°C (153°F)
HMIS Key: 2-3-1-X
Hydrolytic Sensitivity: 7: reacts slowly with moisture/water
Refractive Index: 1.4570
Application: Employed in CVD of HfO2.1
Used in atomic layer deposition (ALD) of hafnium oxide layers.2
Reference: 1. Williams, P. et al. J. Mater. Chem. 2002, 12, 165.
2. Kukli, K. et al. Chem. Mater. 2003, 15, 1722.