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- HMIS 3-1-0-X
- Molecular Formula C15H3ErF18O6
- Molecular Weight (g/mol) 788.42
- TSCA No
- Melting Point (˚C) 110-120°
Used to prepare Er doped silicon by CVD in combination with SiH4 at 650° at 0.001 mm.1
1. Beach, D. et al. Mater. Res. Soc. Proc. 1993, 282, 397; Eur. Patent Application 480110, 1993.