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COBALT(III) 2,2,6,6-TETRAMETHYL-3,5-HEPTANEDIONATE
ALD Material
Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Cobalt III 2,2,6,6-tetramethylheptanedionate; Cobaltic TMHD
Boiling Point: 120° / 0.5 sub
Melting Point: 254-6° dec
Molecular Weight: 608.74
HMIS Key: 2-1-0-X
Hydrolytic Sensitivity: 4: no reaction with water under neutral conditions
Formula: C33H57CoO6
Application: Precursor for conductive Sr-Co-Fe ceramic films.1
Reference: 1. Xiao, C. et al. J. Mater. Res. 1998,13, 173.
Additional Properties: Color: green
Metal-Organics
Metal-Organics
ALD Materials
Organosilicon & Metal-organic Precursors for Microelectronics & Optoelectronics
Review—Cobalt Thin Films: Trends in Processing Technologies and Emerging Applications