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- Einecs Number 244-527-6
- HMIS 3-1-1-X
- Molecular Formula C15H21CoO6
- Molecular Weight (g/mol) 356.24
- TSCA Yes
- Boiling Point (˚C/mmHg) 340
- Density (g/mL) 1.418
- Melting Point (˚C) 214-6°
Cocatalyst for the polymerization of dienes.1
Catalyst for the polymerization of propylene oxide.2
Component in preparation of light sensitive photographic materials.4
1. Blackley, D. et al. ACS Symp. Ser. 1976, 24, 162.
2. Hsieh, H. J. Appl. Polym. Sci. 1971, 15, 2425.
3. Kaeriyama, K. et al. Makromol. Chem. 1973, 167, 129.
4. Fuji Photo Chem. Abstr. 85, 54641h; U.S. Patent 3,933,488, 1976.
Cobalt metallic films are the subject of an ever-expanding academic and industrial interest for incorporation into a multitude of new technological applications. This report reviews the state-of-the art chemistry and deposition techniques for cobalt thin films, highlighting innovations in cobalt metal-organic chemical vapor deposition (MOCVD), plasma and thermal atomic layer deposition (ALD), as well as pulsed MOCVD technologies, and focusing on cobalt source precursors, thin and ultrathin film growth processes, and the resulting effects on film composition, resistivity and other pertinent properties.