Silicon source precursors are used to produce silicon nitride (SiN) ultrathin film deposition in semiconductor applications. Silicon Nitride (SiN) thin films have broad utility in integrated circuitry (IC) applications due to their combination of physical, mechanical, electrical, and optoelectronic properties. These films are used in microprocessor units (MPU), system-on-a-chip (SoC), flash memory, and three-dimensional integrated circuits (3D IC). These precursors are designed with desirable combinations of physical properties, thermal stability and chemical reactivity to meet the needs of SiN deposition processes involving chemical vapor deposition (CVD), plasma enhanced CVD (PE CVD), atomic layer deposition (ALD), and liquid phase deposition (LPD).
(20-25% NONAFLUOROHEXYLMETHYLSILOXANE) - (75-80% DIMETHYLSILOXANE) copolymer, VINYL TERMINATED