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Gelest offers a range of metal-organic precursors for metallization applications in microelectronic applications. Precursors are available for commonly employed metals, such as silicon, copper, aluminum, titanium, tantalum and tungsten. These precursors are volatile solids or liquids and can be used to deposit metal thin films in typical CVD or ALD processes. Typical applications are for metal interconnects or diffusion barriers, for example.
Some key products;
| SIT7123.0 | Tetraiodosilane |
| INCO032 | Cobalt tricarbonyl nitrosyl |
| AKC252.8 | Copper I hexafluoropentanedionate vinyltrimethylsilane complex |
| OMAL008 | Alane-trimethylamine complex |
| INTI071 | Titanium tetraiodide |
| INTA070 | Tantalum pentabromide |
| INTU030 | Tungsten hexacarbonyl |
For a more complete listing of Gelest products which are useful in this application, click here.
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