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Chemical Vapor Deposition
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Gelest offers a large number of chemical vapor deposition (CVD) precursors for a wide variety of thin film materials. CVD is a technique in which a chemical is reacted in the gas phase to deposit a film on a substrate. Metal-organic precursors that are volatile and reactive in the gas phase are employed for CVD. A wide variety of co-reactants and reaction conditions can be used to deposit mainly metal, metal oxides or metal nitrides.
Gelest offers a product line of metal alkoxide, substituted diketonate, amide, alkyl and halogen complexes. Listed below are some of our key products.
| SIC2268.5 | 2-Chloroethylsilane |
| AKC252.8 | Copper I hexafluoropentanedionate – Vinyltrimethylsilane complex |
| AKE295 | Europium 2,2,6,6-tetramethyl-3,5-heptanedionate |
| SIE4885.0 | Erbium tris[bis(trimethylsilyl)amide] |
| GET7100 | Tetraethoxygermane |
| SIT7110.2 | Tetraethoxysilane |
| GET7550 | Tetramethylgermane |
| SIT7555.0 | Tetramethylsilane |
| INTI071 | Titanium tetraiodide |
| OMTI075 | Titanium tetrakis(diethylamide) |
For a more complete listing of Gelest products which are useful in this application, with literature references, click here.
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